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CorEnergy Epitaxial Products

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CEEFET20NOP

  • GaN HEMT structure. Layer structure is: 21 nm 20% AlGaN barrier / 1 nm AlN spacer on GaN. This product is suitable for processing HEMT switches. Choice of SiC, Si or sapphire substrates in various common diameters is available.

CEEFET23NOP

  • GaN HEMT structure. Layer structure is: 21 nm 23% AlGaN barrier / 1 nm AlN spacer on GaN. This product is suitable for processing HEMT switches. Choice of SiC, Si or sapphire substrates in various common diameters is available.

CEEFET26NOP

  • GaN HEMT structure. Layer structure is: 21 nm 26% AlGaN barrier / 1 nm AlN spacer on GaN. This product is suitable for processing HEMT switches. Choice of SiC, Si or sapphire substrates in various common diameters is available.

CEEFET20SIN

  • GaN HEMT structure. Layer structure is: in-situ grown SiNx passivation layer / 21 nm 20% AlGaN barrier / 1 nm AlN spacer on GaN. This product is suitable for processing HEMT switches. Choice of SiC, Si or sapphire substrates in various common diameters is available.

CEEFET23SIN

  • GaN HEMT structure. Layer structure is : in-situ grown SiNx passivation layer / 21 nm 23% AlGaN barrier / 1 nm AlN spacer on GaN. This product is suitable for processing HEMT switches. Choice of SiC, Si or sapphire substrates in various common diameters is available.

CEEFET26SIN

  • GaN HEMT structure. Layer structure is: in-situ grown SiNx passivation layer / 21 nm 26% AlGaN barrier / 1 nm AlN spacer on GaN. This product is suitable for processing HEMT switches. Choice of SiC, Si or sapphire substrates in various common diameters is available.

 

CEECUSTOM

  • Custom epitaxial structures that are variations or minor modifications to standard products. Layer structure will consist of desired combination of GaN, AlGaN and AlN layers. The GaN buffer layer can be doped with Fe or C to reduce buffer leakage currents. Mg doping and In-containing alloys are presently not available. Choice of SiC, Si or sapphire substrates in various common diameters is available.


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